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MT48H16M16LF

Micron Technology
Part Number MT48H16M16LF
Manufacturer Micron Technology
Description (MT48H16M16LF / MT48H16M32LF) 16 Meg x 32 Mobile SDRAM
Published Oct 8, 2007
Detailed Description www.DataSheet4U.com 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 b...
Datasheet PDF File MT48H16M16LF PDF File

MT48H16M16LF
MT48H16M16LF


Overview
www.
DataSheet4U.
com 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features • Endur-IC™ technology • Fully synchronous; all signals registered on positive edge of system clock • VDD = 1.
7–1.
95V; VDDQ = 1.
7–1.
95V • Internal, pipelined operation; column address can be changed every clock cycle • Four internal banks for concurrent operation • Programmable burst lengths: 1, 2, 4, 8, and continuous1 • Auto precharge, includes concurrent auto precharge • Auto refresh and self refresh modes • LVTTL-compatible inputs and outputs • On-chip temperature sensor to control refresh rate • Partial-array self refresh (PASR) • Deep power-down (DPD) • Selectable output drive (DS) Table 1: DQ Bus Width Options • VDD/VDDQ – 1.
8V/1.
8V • Row size option – Standard addressing option – Reduced page-size option • Configuration – 32 Meg x 16 (8 Meg x 16 x 4 banks) – 16 Meg x 32 (4 Meg x 32 x 4 banks) • Plastic “green” packages – 54-Ball VFBGA (10mm x 11.
5mm) – 90-Ball VFBGA (10mm x 13mm) • Timing – cycle time – 7.
5ns at CL = 3 – 8ns at CL = 3 • Power – Standard IDD2P/IDD7 – Low IDD2P/IDD7 • Operating temperature range – Commercial (0°C to +70°C) – Industrial (–40°C to +85°C) • Design revision Marking H LF LG3, 4 32M16 16M32 CJ5 CM3 -75 -8 None L None IT :A Configuration Addressing JEDECStandard Option 4 BA0, BA1 A0–A12 A0–A9 A0–A12 A0–A8 Reduced Page-Size Option2 4 BA0, BA1 – – A0–A13 A0–A7 Architecture Number of banks Bank address balls Row address balls Column address balls Row address balls Column address balls x16 x32 Table 2: Key Timing Parameters CL = CAS (READ) latency Clock Rate (MHz) CL = 2 104 100 CL = 3 133 125 Access Time CL = 2 9ns 9ns CL = 3 6ns 7ns Notes: 1.
For continuous page burst, contact factory for availability.
2.
For reduced page-size option, contact factory for availability.
3.
LG is a reduced page-size option.
Contact factory for availability.
4.
Only available f...



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