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MITSUBISHI
PM75B4LB060
FLAT-BASE TYPE INSULATED PACKAGE
PM75B4LB060
FEATURE
a) Adopting new 5th generation IGBT (CSTBT TM ) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1. 55V @Tj=125°C b) Over-temperature protection by detecting Tj of the CSTBT TM chips and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series. • 2φ 75A, 600V Current-sense IGBT type inverter • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) • UL Recognized Yellow Card No. E80276(N) File No. E80271
APPLICATION Photo voltaic power conditioner
PACKAGE OUTLINES
L A B E L
Dimensions in mm
120 7 19. 75 3. 25 16 3-2 106 ±0. 25 66. 5 17 16 3-2 16 3-2 15. 25 6-2 2-φ5. 5 MOUNTING HOLES
1
16 1. 5
1. 5
3
4 4
25. 75 55
N
35
1
P
5
9
13
19
4 4
B
U
V
W
25
4 4 2. 5 19. 5 22 7. 75 23
4 4
4 4
4 4
4φ2
1
2-φ2. 5
. 5
9. 5
23 98. 25
23
Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UFO UP VUP1 VVPC VFO VP VVP1 NC NC 11. 12. 13. 14. 15. 16. 17. 18. 19. NC NC VNC VN1 NC UN VN NC Fo
19-s0. 5
11. 5 27. 5
9. 5
Jun. 2005
MITSUBISHI
PM75B4LB060
FLAT-BASE TYPE INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
NC FO 1. 5k
VNC NC
VN1
VN
UN
NC NC NC NC
VP VVP1 VVPC VFO
UP VUPC UFO
VUP1
1. 5k
1. 5k
GND IN Fo
Vcc
GND IN Fo
Vcc
GND IN Fo
Vcc
GND IN Fo
Vcc
GND SC OT OUT
GND SC OT OUT
GND SC OT OUT
GND SC OT OUT
B
N
W
V
U
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART
Symbol VCES ±IC ±ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C Ratings 600 75 150 390 –...
PM75B4LB060 PDF File
