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RQA0009TXDQS

Part Number	RQA0009TXDQS
Manufacturer	Renesas Technology
Description	Silicon N-Channel MOS FET
Published	Oct 9, 2007
Detailed Description	www.DataSheet4U.com RQA0009TXDQS Silicon N-Channel MOS FET REJ03G1520-0100 Rev.1.00 Jul 04, 2007 Features • High Outpu...
Datasheet	RQA0009TXDQS PDF File

Overview

www.
DataSheet4U.
com RQA0009TXDQS Silicon N-Channel MOS FET REJ03G1520-0100 Rev.
1.
00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.
8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) • Compact package capable of surface mounting • Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) Outline RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK R ) 3 3 2 1 1 4 1.
Gate 2.
Source 3.
Drain 4.
Source 2, 4 Note: Marking is “TX”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Sto...

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RQA0009TXDQS Silicon N-Channel MOS FET - Renesas Technology

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