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K9HBG08U1M

Samsung Electronics
Part Number K9HBG08U1M
Manufacturer Samsung Electronics
Description Flash Memory
Published Oct 9, 2007
Detailed Description www.DataSheet4U.com K9HBG08U1M K9LAG08U0M K9MCG08U5M Advance FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS...
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K9HBG08U1M
K9HBG08U1M

Overview
www.
DataSheet4U.
com K9HBG08U1M K9LAG08U0M K9MCG08U5M Advance FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1.
For updates or additional information about Samsung products, contact your nearest Samsung office.
2.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1 www.
DataSheet4U.
com K9HBG08U1M K9LAG08U0M K9MCG08U5M Advance FLASH MEMORY Document Title 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory Revision History Revision No 0.
0 0.
1 0.
2 0.
3 0.
4 History 1.
Initial issue 1.
AC Para.
tRHW deleted 2.
the power recovery time of minmum is changed from 10µs to 100µs(p43) 1.
DSP package is added 2.
The note of program/erase characteristics is changed 1.
Max Icc is changed from 3.
0mA to 3.
5mA 1.
Leaded part is eliminated.
2.
tR 50us -> 60us (p.
3,15,38) 3.
tRHW, tCSD parameter is defined.
4.
Technical note is added.
(p.
19) Draft Date Feb.
1st 2005 Sep.
1st 2005 Remark Advance Advance Nov.
25th 2005 Advance Feb.
22nd 2006 Advance Mar.
21 2006 Advance 0.
5 0.
6 0.
7 1.
Endurance is changed (10K->5K) 1.
Max.
tPROG is changed (2ms -> 3ms) 1.
38 pin of TSOP QDP package is changed (PRE->N.
C) Apr.
20th 2006 Apr.
25th 2006 June 24th 2006 Advance Advance Advance The attached data sheets are prepared and approved by SAMSUNG Electroni...


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