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FLM3742-8F

Eudyna Devices
Part Number FLM3742-8F
Manufacturer Eudyna Devices
Description C-Band Internally Matched FET
Published Oct 15, 2007
Detailed Description www.DataSheet4U.com FLM3742-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm ...
Datasheet PDF File FLM3742-8F PDF File

FLM3742-8F
FLM3742-8F

Overview
www.
DataSheet4U.
com FLM3742-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.
5dBm (Typ.
) High Gain: G1dB = 11.
0dB (Typ.
) High PAE: ηadd = 37% (Typ.
) Low IM3 = -46dBc@Po = 28.
5dBm Broad Band: 3.
7 ~ 4.
2GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package DESCRIPTION The FLM3742-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 42.
8 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents should not exceed 32.
0 and -4.
4 mA respectively with gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IB Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 4.
2 GHz, ∆f = 10 MHz 2-Tone Test Pout = 28.
5dBm S.
C.
L.
Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.
55 IDSS (Typ.
), f = 3.
7 ~ 4.
2 GHz, ZS=ZL= 50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 2200mA VDS = 5V, IDS = 180mA IGS = -180µA Min.
-1.
0 -5.
0 38.
5 10.
0 -44 Limit Typ.
Max.
3900 5850 2000 -2.
0 39.
5 11.
0 -3.
5 Unit mA mS V V dBm dB mA % dB dBc °C/W °C 2200 2600 37 -46 3.
0 ±0.
6 3.
5 80 G.
C.
P.
: Gain Compression Point, S.
C.
L.
: Single Carrier Level Edition 1.
...


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