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IRFN214B

Fairchild Semiconductor
Part Number IRFN214B
Manufacturer Fairchild Semiconductor
Description 250V N-Channel MOSFET
Published Oct 16, 2007
Detailed Description www.DataSheet4U.com IRFN214B IRFN214B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power...
Datasheet PDF File IRFN214B PDF File

IRFN214B
IRFN214B

Overview
www.
DataSheet4U.
com IRFN214B IRFN214B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for electronic lamp ballast.
Features • • • • • • 0.
6A, 250V, RDS(on) = 2.
0Ω @VGS = 10 V Low gate charge ( typical 8.
1 nC) Low Crss ( typical 7.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! ! " " " TO-92 IRFN Series GDS...


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