DatasheetsPDF.com

GM2501

GTM
Part Number GM2501
Manufacturer GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 20, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/12/16 REVISED DATE : GM2501 P-CHANNEL ENHANCEMENT MODE P...
Datasheet PDF File GM2501 PDF File

GM2501
GM2501

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/12/16 REVISED DATE : GM2501 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 200m -2.
6A The GM2501 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The SOT-89 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage and battery power applications.
*Simple Drive Requirement *Surface Mount Device Description Features Package Dimensions SOT-89 REF.
A B C D E F Millimeter Min.
Max.
4.
4 4.
6 4.
05 4.
25 1.
50 1.
70 1.
30 1.
50 2.
40 2.
60 0.
89 1.
20 REF.
G H I J K L M Millimeter Min.
Max.
3.
00 REF.
1.
50 REF.
0.
40 0.
52 1.
40 1.
60 0.
35 0.
41 5° TYP.
0.
70 REF.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -20 ±12 -2.
6 -2.
1 -10 1.
5 0.
012 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient Max.
Symbol Rthj-a Value 83.
3 Unit /W GM2501 Page: 1/4 www.
DataSheet4U.
com ISSUED DATE :2005/12/16 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
-20 -0.
5 Typ.
-0.
1 4.
4 5.
2 1.
36 0.
6 5.
2 9.
7 19 29 295 170 65 Max.
±100 -1 -10 200 250 300 10 pF ns nC m Unit V V/ V S nA uA uA Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VDS=VGS, ID=-250uA VDS=-5V, ID=-2.
6A VGS= ±12V VDS=-20V, VGS=0 VDS=-16V, VGS=0 VGS=-10V, ID=-2.
6A VGS=-4.
5V, ID=-2.
0A VGS=-2.
5V, ID=-1.
0A ID=-2.
8A VDS=-6V VGS=-5V VDS=-15V ID=-1A VGS=-10V RG=6 RD=15 VGS=0V VDS=-6V f=1.
0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)