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IXEH40N120

IXYS Corporation
Part Number IXEH40N120
Manufacturer IXYS Corporation
Description NPT3 IGBT
Published Oct 24, 2007
Detailed Description IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G ...
Datasheet PDF File IXEH40N120 PDF File

IXEH40N120
IXEH40N120

Overview
IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.
3 V typ.
C TO-247 AD G G C E C (TAB) E G = Gate, C = Collector, E = Emitter, TAB = Collector IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) VGE(th) I CES IGES QGon Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings ±1200 V ± 20 V 55 A 35 A 80 A 600 V 300 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
typ.
max.
IC = 30 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE V CE = V; CES V GE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V VCE = 120V; VGE = 15 V; IC = 35 A 2.
3 2.
7 V 2.
8 V 4 8V 50 µA 3.
0 mA 500 nA 90 nC Features • IGBT with NPT (non punch through) structure • reverse blocking capability - function of series diode monolithically integrated, no external series diode r...


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