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PH6325L

NXP
Part Number PH6325L
Manufacturer NXP
Description N-channel TrenchMOS logic level FET
Published Oct 30, 2007
Detailed Description www.DataSheet4U.com PH6325L N-channel TrenchMOS™ logic level FET M3D748 Rev. 01 — 28 April 2004 Preliminary data 1. ...
Datasheet PDF File PH6325L PDF File

PH6325L
PH6325L

Overview
www.
DataSheet4U.
com PH6325L N-channel TrenchMOS™ logic level FET M3D748 Rev.
01 — 28 April 2004 Preliminary data 1.
Product profile 1.
1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.
2 Features s Optimized for use in DC-to-DC converters s Low threshold voltage s Very low switching and conduction losses s Low thermal resistance.
1.
3 Applications s DC-to-DC converters s Voltage regulators s Switched-mode power supplies s Notebook computers.
1.
4 Quick reference data s VDS ≤ 25 V s Qgd = 3.
3 nC (typ) s RDSon ≤ 6.
3 mΩ (VGS = 10 V) s ID ≤ 78.
7 A s Qg(tot) = 13.
3 nC (typ) s RDSon ≤ 9.
5 mΩ (VGS = 4.
5 V).
2.
Pinning information Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK), simplified outline and symbol Description source (s) gate (g) mounting base; connected to drain (d) mb d Simplified outline Symbol g s MBB076 1 2 3 4 MBL286 Top view SOT669 (LFPAK) www.
DataSheet4U.
com Philips Semiconductors PH6325L N-channel TrenchMOS™ logic level FET 3.
Ordering information Table 2: Ordering information Package Name PH6325L LFPAK Description Plastic single-ended surface mounting package; 4 leads Version SOT669 Type number 4.
Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 34 A; tp = 0.
15 ms; VDD = 25 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C unclamped inductive load; ID = 3.
4 A; tp = 0.
015 ms; VDD = 25 V; RGS = 50 Ω; VGS = 10 V; starting at Tj = 25 °C [1] [2] Conditions 25 °C ≤ Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 Tmb = 25 °C; pu...


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