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AP15N03GP

Advanced Power Electronics
Part Number AP15N03GP
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 31, 2007
Detailed Description www.DataSheet4U.com AP15N03GP Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Driv...
Datasheet PDF File AP15N03GP PDF File

AP15N03GP
AP15N03GP


Overview
www.
DataSheet4U.
com AP15N03GP Pb Free Plating Product Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching ▼ RoHS Compliant G D S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID TO-220 30V 80mΩ 15A Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercialindustrial applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuit.
G S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 30 ± 20 15 9 50 28 0.
22 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 4.
5 62 Units ℃/W ℃/W Data & specifications subject to change without notice 200722051-1/6 www.
DataSheet4U.
com AP15N03GP Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
30 1 ` - Typ.
0.
037 Max.
Units 80 100 3 1 25 ±100 V V/℃ mΩ mΩ V uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8A VGS=4.
5V, ID=6A 5.
4 1.
3 3.
6 3.
6 19.
8 13 3.
2 260 144 13 VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=30V, VGS=0V VDS=24V, VG...


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