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DFB50N06

DnI
Part Number DFB50N06
Manufacturer DnI
Description N-Channel MOSFET
Published Nov 3, 2007
Detailed Description www.DataSheet4U.com DFB50N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.023 Ω )@VGS=10V Gate Charge (Typical 3...
Datasheet PDF File DFB50N06 PDF File

DFB50N06
DFB50N06

Overview
www.
DataSheet4U.
com DFB50N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.
023 Ω )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.
Drain BVDSS = 60V 1.
Gate 3.
Source RDS(ON) = 0.
023 ohm ID = 50A General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics.
TO-263 (D2-Pak) 2 1 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt ...


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