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D2P6M

DnI
Part Number D2P6M
Manufacturer DnI
Description Standard Gate SCR
Published Nov 3, 2007
Detailed Description www.DataSheet4U.com D2P6M Sensitive Gate Silicon Controlled Rectifiers Features 1.Cathode Symbol 2. Anode BVDRM = 600...
Datasheet PDF File D2P6M PDF File

D2P6M
D2P6M

Overview
www.
DataSheet4U.
com D2P6M Sensitive Gate Silicon Controlled Rectifiers Features 1.
Cathode Symbol 2.
Anode BVDRM = 600V IT(RMS) = 2.
0 A 3.
Gate ITSM = 4 A Repetitive Peak Off-State Voltage : 600V R.
M.
S On-State Current ( IT(RMS)= 2.
0 A ) On-State Voltage (2.
2V(max) @ ITM= 4A) Pb - Free Packages are Available TO-126 General Description Sensitive-gate triggering thyristor is suitable for the application where requiring low gate triggerring current system Used for electric blanket ,electronic jar ,temperature control,lighting control such as a entertainment display.
Automatic ignition system , Battery charger .
1 2 3 Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition sine wave,50 to 60Hz,gate open half sine wave : TC =77 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.
3ms TC= 77 °C, pulse width TC =77°C,pulse width TC =77 °C, pulse width TC= 77 °C, pulse width 1.
0 1.
...


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