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DTF6A80

DnI
Part Number DTF6A80
Manufacturer DnI
Description Triacs
Published Nov 3, 2007
Detailed Description www.DataSheet4U.com DTF6A80 UL No. E256958 Triac / Standard Gate Symbol 2.T2 Features Repetitive Peak Off-State Volta...
Datasheet PDF File DTF6A80 PDF File

DTF6A80
DTF6A80

Overview
www.
DataSheet4U.
com DTF6A80 UL No.
E256958 Triac / Standard Gate Symbol 2.
T2 Features Repetitive Peak Off-State Voltage : 800V R.
M.
S On-State Current ( IT(RMS)= 6 A ) High Commutation dv/dt Isolation Voltage ( VISO = 1500V AC ) 3.
Gate 1.
T1 BVDRM = 800V IT(RMS) = 6 A ITSM = 66 A TO-220F General Description This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.
1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM VISO TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 800 TC = 94 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 6.
0 60/66 18 3.
0 0.
3 2.
0 10 A.
C.
1 minute 1500 - 40 ~ 125 - 40 ~ 150 2.
0 Parameter Repetitive Peak Off-State Voltage R.
M.
S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown Voltage(R.
M.
S.
) Operating Junction Temperature Storage Temperature Mass Units V A A A2 s W W A V V °C °C g MAY 2005 .
Rev 0 copyright@ D&I Semiconductor Co.
, Ltd.
, All rights reserved.
1/6 www.
DataSheet4U.
com DTF6A60 Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 8 A, Inst.
Measurement Ratings Min.
Typ.
Max.
1.
0 1.
5 20 Unit IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c) mA V Gate Trigger Current VD = 6 V, RL=10 20 20 1.
5 mA Gate Trigger Voltage VD = 6 V, RL=10 1.
5 1.
5 V Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -3.
0 A/ms, VD=2/3 VDRM 0.
2 5.
0 10 V V/ mA 3.
8 °C/W Junction to case 2/6 www.
DataSheet4U.
com DTF6A60 Fig 1.
Gate Characteristics 10 2 Fig 2.
On-State Voltage 10 1 VGM (10V) On-Sta...


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