DatasheetsPDF.com

MP4411

Toshiba Semiconductor
Part Number MP4411
Manufacturer Toshiba Semiconductor
Description N-Channel Power MOSFET
Published Nov 14, 2007
Detailed Description www.DataSheet4U.com MP4411 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One) MP4411 Hig...
Datasheet PDF File MP4411 PDF File

MP4411
MP4411

Overview
www.
DataSheet4U.
com MP4411 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One) MP4411 High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver Industrial Applications Unit: mm • • • • • • • 4-V gate drivability Small package by full molding (SIP 12 pin) High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25°C) Low drain-source ON resistance: RDS (ON) = 0.
28 Ω (typ.
) High forward transfer admittance: |Yfs| = 3.
5 S (typ.
) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 100 V) Enhancement-mode: Vth = 0.
8 to 2.
0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation (1-device operation, Ta = 25°C) Drain power dissipation Ta = 25°C (4-device operation) Tc = 25°C DC Pulse Symbol VDSS VDGR VGSS ID IDP PD Rating 100 100 ±20 3 1...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)