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GP9973

GTM
Part Number GP9973
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Nov 26, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/08/04 REVISED DATE : GP9973 N-CHANNEL ENHANCEMENT MODE P...
Datasheet PDF File GP9973 PDF File

GP9973
GP9973

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/08/04 REVISED DATE : GP9973 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 80m 3.
9A The GP9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
*Simple Drive Requirement *Low Gate Charge Description Features Package Dimensions D GAUGE PLANE E REF.
A A1 A2 b b1 b2 b3 c A Millimeter Min.
Max.
0.
381 2.
921 0.
356 0.
356 1.
143 0.
762 0.
203 0.
5334 4.
953 0.
559 0.
508 1.
778 1.
143 0.
356 REF.
c1 D E E1 e HE L Millimeter Min.
Max.
0.
203 0.
279 9.
017 10.
16 6.
096 7.
112 7.
620 8.
255 2.
540 BSC 10.
92 2.
921 3.
810 SEATING PLANE Z Z b L SECTION Z - Z b e DIP-8 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1,2 3 3 c Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 60 20 3.
9 2.
5 20 2 0.
016 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Rthj-amb Value 62.
5 Unit /W GP9973 Page: 1/4 www.
DataSheet4U.
com ISSUED DATE :2005/08/04 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min.
60 1.
0 Typ.
0.
06 3.
5 8 2 4 8 4 20 6 700 80 50 Max.
3.
0 100 1 25 80 100 13 1120 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=3.
9A VGS= 20V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS VDS=60V, VGS=0 VDS=48V, VGS=0 VGS=10V, ID=3.
9A VGS=4.
5V, ID=2.
0A ID=3.
9A VDS=48V VGS=4.
5V VDS=30V ID=1A VGS=10V RG=3.
3 RD=30 VG...


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