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2SD1694 Datasheet PDF


Part Number 2SD1694
Manufacturer NEC
Title NPN SILICON POWER TRANSISTOR
Description ...
Features ...

File Size 179.84KB
Datasheet 2SD1694 PDF File








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2SD1691 : ·High Collector Current -IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max.)@ IC= 2A ·Complement to Type 2SB1151 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid or motor. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Pulse 8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 20 W 1.3 150 .

2SD1691 : , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R204-015.F .

2SD1691 : ·With TO-126 package ·Complement to type 2SB1151 ·Low saturation voltage ·High total power dissipation:PT=1.3W ·Large current capability and wide SOA APPLICATIONS ·DC-DC converter ·Driver of solenoid or motor PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 60 7 5 8 1 1.3 W UNIT V V V A A A SavantIC S.

2SD1691T : ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Collector Current (pulse) 1) TO-126 Plastic Package Symbol VCBO VCEO VEBO IC(DC) IB(DC) IC(pulse) Ptot Ptot Tj TS Value 60 60 7 5 1 8 1.3 20 150 -55 to +150 Unit V V V A A A W W O Total power dissipation (Ta = 25 OC) Total power dissipation (Tc = 25 OC) Junction Temperature Storage Temperature Range PW≦10ms, duty cycle≦50%..

2SD1692 : ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 100V(min.) ·DC Current Gain— : hFE = 2000(Min.) @ IC= 1.5 A ·Complement to Type 2SB1149 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 5 A 1.3 W 15 150 ℃ Tstg Storage Temperature Range -5.

2SD1692 : DATA SHEET SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FEATURES • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat) • Large power dissipation TO-126 type power transistor • Complementary transistor: 2SB1149 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Total power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC(DC) IC(pulse)* PT (Ta = 25°C) PT (Tc = 25°C) Tj Tstg * PW ≤ 10 ms, duty cycle ≤ 50% Ratings 150 100 8.0 ±3.0.

2SD1693 : .

2SD1695 : of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers DataSheet4U.com agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To .

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