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SI8904EDB

Part Number	SI8904EDB
Manufacturer	Vishay Siliconix
Description	Bi-Directional N-Channel MOSFET
Published	Dec 9, 2007
Detailed Description	www.DataSheet4U.com SPICE Device Model Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V (D-S) MOSFET CHARACTERI...
Datasheet	SI8904EDB PDF File

Overview

www.
DataSheet4U.
com SPICE Device Model Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V (D-S) MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS.
The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model.
All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as...

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SI8904EDB Bi-Directional N-Channel MOSFET - Vishay Siliconix

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