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SSM9973GJ

Silicon Standard
Part Number SSM9973GJ
Manufacturer Silicon Standard
Description (SSM9973GJ / SSM9973GH) N-Channel Enhancement Mode Power MOSFET
Published Dec 9, 2007
Detailed Description www.DataSheet4U.com SSM9973GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast ...
Datasheet PDF File SSM9973GJ PDF File

SSM9973GJ
SSM9973GJ

Overview
www.
DataSheet4U.
com SSM9973GH,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching G D BV DSS R DS(ON) ID 60V 80mΩ 14A S Description The SSM9973GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters.
The through-hole version, the SSM9973GJ in TO-251, is available for low-footprint vertical mounting.
These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.
G D S TO-252 (H) Pb-free lead finish (second-level interconnect) G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 60 ±20 14 9 40 27 0.
22 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 4.
5 110 Unit °C/W °C/W 2/16/2005 Rev.
2.
2 www.
SiliconStandard.
com 1 of 5 www.
DataSheet4U.
com SSM9973GH,J Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min.
60 1 Typ.
0.
05 8.
6 8 3 4 7 15 16 3 720 77 45 Max.
Units 80 100 3 1 25 ±100 13 1150 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA VGS=10V, ID=9A VGS=4.
5V, ID=6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (T...


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