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MRF281SR1

Part Number	MRF281SR1
Manufacturer	Motorola
Description	RF POWER FIELD EFFECT TRANSISTORS
Published	Dec 10, 2007
Detailed Description	ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Cha...
Datasheet	MRF281SR1 PDF File

Overview

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz.
Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.
• Specified Two--Tone Performance @ 1930 MHz, 26 Volts Output Power — 4 Watts PEP Power Gain — 11 dB Efficiency — 30% Intermodulation Distortion — --29 dBc • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power Features • Excellent Thermal Stability • Characterized with Series Equivalent Large--Signal Impedance Parameters • S--Parameter Characterization at High Bias Levels • RoHS Compliant • In Tape and Reel.
R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
Document Number: MRF281 Rev.
6, 10/2008 MRF281SR1 MRF281ZR1 1930--1990 MHz, 4 W, 26 V LATERAL N--CHANNEL BROADBAND...

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MRF281SR1 RF POWER FIELD EFFECT TRANSISTORS - Motorola

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