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K4X51163PC

Samsung semiconductor
Part Number K4X51163PC
Manufacturer Samsung semiconductor
Description 32M x16 Mobile-DDR SDRAM
Published Dec 12, 2007
Detailed Description www.DataSheet4U.com K4X51163PC - L(F)E/G 32M x16 Mobile-DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.8V power supply, 1.8V...
Datasheet PDF File K4X51163PC PDF File

K4X51163PC
K4X51163PC


Overview
www.
DataSheet4U.
com K4X51163PC - L(F)E/G 32M x16 Mobile-DDR SDRAM FEATURES Mobile-DDR SDRAM • 1.
8V power supply, 1.
8V I/O power • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • 1 /CS • 1 CKE • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) - Partial Self Refresh Type ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ) • Internal Temperature Compensated Self Refresh • Deep Power Down Mode • All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• LDM, UDM for write masking only.
• Auto refresh duty cycle - 7.
8us for -25 to 85 °C Operating Frequency DDR266 Spee...



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