DatasheetsPDF.com

5STB13N6500

ABB
Part Number 5STB13N6500
Manufacturer ABB
Description Bi-Directional Control Thyristor
Published Dec 13, 2007
Detailed Description www.DataSheet4U.com VSM IT(AV)M IT(RMS) ITSM VT0 rT = 6500 V = 1405 A = 2205 A = 22×103 A = 1.2 V = 0.6 mΩ Bi-Directi...
Datasheet PDF File 5STB13N6500 PDF File

5STB13N6500
5STB13N6500

Overview
www.
DataSheet4U.
com VSM IT(AV)M IT(RMS) ITSM VT0 rT = 6500 V = 1405 A = 2205 A = 22×103 A = 1.
2 V = 0.
6 mΩ Bi-Directional Control Thyristor 5STB 13N6500 Doc.
No.
5SYA1035-03 May 06 • • • • • Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for energy management and industrial applications Optimum power handling capability Interdigitated amplifying gate.
The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated) Blocking Maximum rated values Note 1 Parameter Max.
surge peak blocking voltage Max.
repetitive peak reverse blocking voltage Critical rate of rise of commutating voltage Characteristic values Symbol Conditions VSM VRM 1) min typ max 6500 5600 2000 Unit V V V/µs f = 5 Hz, tp = 10 ms f = 50 Hz, tp = 10 ms Exp.
to 3750 V, Tvj = 125°C 1) dv/dtcrit Parameter Max.
leakage current Symbol Conditions IRM VRM, Tvj = 125 °C min typ max 400 Unit mA 1) VRM is equal to VSM up to T...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)