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W7NA80

STMicroelectronics
Part Number W7NA80
Manufacturer STMicroelectronics
Description STW7NA80
Published Dec 13, 2007
Detailed Description www.DataSheet4U.com ® STW7NA80 STH7NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW 7NA80 STH7N...
Datasheet PDF File W7NA80 PDF File

W7NA80
W7NA80

Overview
www.
DataSheet4U.
com ® STW7NA80 STH7NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW 7NA80 STH7NA80F I V DSS 800 V 800 V R DS(on) < 1.
9 Ω < 1.
9 Ω ID 6.
5 A 4 A s s s s s s s TYPICAL RDS(on) = 1.
68 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 2 3 2 1 3 TO-247 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Valu e ST W7NA80 V DS V DGR V GS ID ID I DM ( • ) P tot V ISO Ts tg Tj Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature o o Unit STH7NA80FI 800 800 ± 30 V V V 4 2.
5 26 60 0.
48 4000 A A A W W /o C V o o 6.
5 4 26 150 1.
2  -65 to 150 150 C C (•) Pulse width limited by safe operating area October 1998 1/10 www.
DataSheet4U.
com STW7NA80-STH7NA80FI THERMAL DATA TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.
83 30 0.
1 300 ISOWATT 218 2.
08 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Max Value 6.
3 320 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con d...


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