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2SJ332

Renesas Technology
Part Number 2SJ332
Manufacturer Renesas Technology
Description Silicon P-Channel MOS FET
Published Dec 20, 2007
Detailed Description www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Silicon P-Channel MOS FET November 1996 Application High speed power switchin...
Datasheet PDF File 2SJ332 PDF File

2SJ332
2SJ332

Overview
www.
DataSheet4U.
com 2SJ332(L), 2SJ332(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2 2 3 3 www.
DataSheet4U.
com 2SJ332(L), 2SJ332(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Ratings –20 ±20 –10 –40 –10 20 150 –55 to +150 Unit V V A A A W °C °C 2 www.
DataSheet4U.
com 2SJ332(L), 2SJ332(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr –20 ±20 — — –1.
0 — — 6 — — — — — — — — — Typ — — — — — 0.
05 0.
09 9 730 680 260 13 110 90 110 –1.
2 50 Max — — ±10 –100 –2.
5 0.
08 0.
14 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V µs IF = –10 A, VGS = 0 IF = –10 A, VGS = 0, diF/dt = 50 A/µs ID = –5 A, VGS = –10 V, RL = 2 Ω Test conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –16 V, VGS = 0 ID = –1 mA, VDS = –10 V ID = –5 A, VGS = –10 V* ID = –5 A, VGS = –4 V* VDS = –10 V, VGS = 0, f = 1 MHz 1 1 Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1.
Pulse test ID = –5 A, VDS = –10 V...


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