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K8A5615EBA

Samsung Electronics
Part Number K8A5615EBA
Manufacturer Samsung Electronics
Description Flash Memory
Published Dec 30, 2007
Detailed Description www.DataSheet4U.com K8A5615ET(B)A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR F...
Datasheet PDF File K8A5615EBA PDF File

K8A5615EBA
K8A5615EBA


Overview
www.
DataSheet4U.
com K8A5615ET(B)A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No.
History 0.
0 0.
1 Advanced Revision - Change the speed code 7B : 90ns @54MHz ---> 7B : 88.
5ns @54MHz Revision - Change the device version ID Top boot device : 22ECH --> 22FCH Bottom boot device : 22EDH --> 22FDH - Not support accelerated quad word program operation Revision - Change the initial access time of asynchronous read mode K8A56156ET(B)A-DE7C tAA : 70ns--->80ns tCE : 70ns--->80ns - Support accelerated quad word program operation Revision - Add the operation flow chart Revision - Add the description of range limitation of data read out during program suspend.
(Refer to "Program Suspend/Resume" paragragh) Draft Date March 15, 2004 June 1, 2004 Remark Advance Preliminary 0.
2 July 5, 2004 Preliminary 0.
3 August 3, 2004 Preliminary 0.
4 August 23, 2004 Preliminary 0.
5 September 6, 2004 Preliminary 0.
6 Revision December 13, 2004 Preliminary - Add the requirement and note of Quadruple word program operation Specification finalized December 16, 2004 1.
0 1 Revision 1.
0 December, 2004 www.
DataSheet4U.
com K8A5615ET(B)A FLASH MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory FEATURES • Single Voltage, 1.
7V to 1.
95V for Read and Write operations • Organization - 16,772,216 x 16 bit ( Word Mode Only) • Read While Program/Erase Operation • Multiple Bank Architecture - 16 Banks (16Mb Partition) • OTP Block : Extra 256Byte block • Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : 90ns (54MHz) / 80ns (66MHz) - Synchronous Random Access Time : 88.
5ns (54MHz) / 70ns (66MHz) - Burst Access Time : 14.
5ns (54MHz) / 11ns (66MHz) • Burst Length : - Continuous Linear Burst - Linear Burst : 8-word & 16-word with No-wrap & Wrap • Block Architecture - Eight 4Kword blocks and five hundreds eleven 32Kword blocks - Bank 0 contains eight 4 Kword blocks and thirty-one 32Kword...



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