DatasheetsPDF.com

C2983

Part Number	C2983
Manufacturer	Toshiba Semiconductor
Description	2SC2983
Published	Jan 12, 2008
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier ...
Datasheet	C2983 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications 2SC2983 Unit: mm • High transition frequency: fT = 100 MHz (typ.
) • Complementary to 2SA1225 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V Collector current IC 1.
5 A Base current IB 0.
3 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.
0 W 15 Junction temperature Tj 150 °C JEDEC ― Storage temperature range Tstg −55 to 150 °C JEITA ― Note1: Using continuously under heavy loads (e.
g.
the ap...

Similar Datasheet

C29-F100 Service Manual - Hitachi
C2901 2SC2901 - NEC
C2904 2SC2904 - ASI
C2905 2SC2905 - Mitsubishi Electronics
C2909 2SC2909 - Sanyo Semicon Device
C2910 2SC2910 - Sanyo Semicon Device
C2911 2SC2911 - Sanyo Semicon Device
C2912 Epitaxial Planar Silicon Transistor - Sanyo
C2921 2SC2921 - Sanken
C2922 2SC2922 - Sanken electric

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)