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MRF7S21150HR3

Part Number	MRF7S21150HR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jan 13, 2008
Detailed Description	Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs ...
Datasheet	MRF7S21150HR3 PDF File

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz.
Suitable for CDMA and multicarrier amplifier applications.
To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.
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01% Probability on CCDF.
Power Gain — 17.
5 dB Drain Efficiency — 31% Device Output Signal PAR — 6.
1 dB @ 0.
01% Probability on CCDF ACPR @ 5 MHz Offset — - 37 dBc in 3.
84 MHz Chan...

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