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SF10J41A

Toshiba Semiconductor
Part Number SF10J41A
Manufacturer Toshiba Semiconductor
Description SILICON PLANAR TYPE THYRISTOR
Published Jan 22, 2008
Detailed Description www.DataSheet4U.com SF10G41A,SF10J41A TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G41A,SF10J41A MEDIUM POWER CONTROL APP...
Datasheet PDF File SF10J41A PDF File

SF10J41A
SF10J41A

Overview
www.
DataSheet4U.
com SF10G41A,SF10J41A TOSHIBA THYRISTOR SILICON PLANAR TYPE SF10G41A,SF10J41A MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400,600V Repetitive Peak Reverse Voltage : VRRM = 400,600V l Average On−State Current l Gate Trigger Current : IT (AV) = 10A : IGT = 15mA (Max.
) Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage Non−Repetitive Peak Reverse Voltage (Non-Repetitive<5ms, Tj = 0~125°C) SF10G41A SF10J41A SF10G41A VRSM SF10J41A IT (AV) IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg 2 SYMBOL VDRM VRRM RATING 400 UNIT V 600 500 V 720 10 16 160 (50Hz) 176 (60Hz) 125 100 5 0.
5 10 −5 2 −40~125 −40~125 A A A A s A / µs W W V V A °C °C 2 Average On−State Current (Half Sine Waveform Tc = 79°C) R.
M.
S On−State Current Peak One Cycle Surge On-State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On-State Curret Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 JEDEC JEITA TOSHIBA Weight: 2g TO−220AB SC−46 13−10G1B 1 2001-07-10 www.
DataSheet4U.
com SF10G41A,SF10J41A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non−Trigger Voltage Critical Rate of Rise of Off−State Voltage Holding Current Latching Current Thermal Resistance SYMBOL IDRM IRRM VTM VGT IGT VGD dv / dt IH IL Rth (j−c) TEST CONDITION VDRM = VRRM = Rated ITM = 30A VD = 6V, RL = 10Ω VD = Rated × 2 / 3, Tc = 125°C VDRM = Rated × 2 / 3, Tc = 125°C Exponential Rise VD = 6V, ITM = 1A VD = 6V, f = 50Hz, tgw = 50µS, iG = 30mA Junction to Case MIN ― ― ― ― 0.
2 100 ― ― ― MAX 10 1.
6 1.
0 15 ― ― 40 60 2.
0 UNIT µA V V mA V V / µs mA mA °C / W MARKING NUMBER *1 *2 SYMBOL SF10G41A TYPE SF10J41A SF10G41A, ...


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