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APT60N60BCSG

Advanced Power Technology
Part Number APT60N60BCSG
Manufacturer Advanced Power Technology
Description Super Junction MOSFET
Published Jan 30, 2008
Detailed Description www.DataSheet4U.com 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb F...
Datasheet PDF File APT60N60BCSG PDF File

APT60N60BCSG
APT60N60BCSG

Overview
www.
DataSheet4U.
com 600V 60A 0.
045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish.
C O OLMOS Power Semiconductors Super Junction MOSFET (B) TO -2 47 D3PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 Package (S) D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT60N60B_SCS(G) 600 60 38 230 ±30 431 3.
45 -55 to 150 260 50 11 2 3 UNIT Volts Amps Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
MOSFET dv/dt Ruggedness (VDS = 480V) Avalanche Current 2 Volts Watts W/°C °C ...


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