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LD01N60

Wanlida
Part Number LD01N60
Manufacturer Wanlida
Description Power FET
Published Feb 9, 2008
Detailed Description www.DataSheet4U.com LD01N60 POWER FIELD EFFECT TRANSISTOR FEATURES ‹ ‹ ‹ ‹ ‹ Robust High Voltage Termination Avalanche ...
Datasheet PDF File LD01N60 PDF File

LD01N60
LD01N60

Overview
www.
DataSheet4U.
com LD01N60 POWER FIELD EFFECT TRANSISTOR FEATURES ‹ ‹ ‹ ‹ ‹ Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
Designed...


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