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BSC042N03LSG

Infineon Technologies
Part Number BSC042N03LSG
Manufacturer Infineon Technologies
Description Power Transistor
Published Feb 11, 2008
Detailed Description www.DataSheet4U.com BSC042N03LS G OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized tec...
Datasheet PDF File BSC042N03LSG PDF File

BSC042N03LSG
BSC042N03LSG

Overview
www.
DataSheet4U.
com BSC042N03LS G OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant Type BSC042N03LS G Package PG-TDSON-8 Marking 042N03LS 1) Product Summary V DS R DS(on),max ID 30 4.
2 93 V mΩ A PG-TDSON-8 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.
5 V, T C=25 °C V GS=4.
5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=45 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage 1) Value 93 59 75 48 Unit A 21 372 50 50 6 ±20 mJ kV/µs V I D,pulse I AS E AS dv /dt V GS T C=25 °C T ...


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