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IRFR9214PBF

Part Number	IRFR9214PBF
Manufacturer	International Rectifier
Description	HEXFET POWER MOSFET
Published	Feb 14, 2008
Detailed Description	www.DataSheet4U.com PD - 95375A IRFR/U9214PbF P-Channel Surface Mount (IRFR9214) l Straight Lead (IRFU9214) l Advanced...
Datasheet	IRFR9214PBF PDF File

Overview

www.
DataSheet4U.
com PD - 95375A IRFR/U9214PbF P-Channel Surface Mount (IRFR9214) l Straight Lead (IRFU9214) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET VDSS = -250V RDS(on) = 3.
0Ω D G S ID = -2.
7A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-hole mounting applications.
Power dissipation levels up to 1.
5 watts are possible in typical surface mount applications.
D-Pak TO-252AA I-Pak TO-251AA Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
-2.
7 -1.
7 -11 50 0.
40 ± 20 100 -2.
7 5.
0 -5.
0 -55 to + 150 260 (1.
6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient Typ.
Max.
2.
5 50 110 Units °C/W 12/07/04 www.
DataSheet4U.
com IRFR/U9214PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold ...

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IRFR9214PBF HEXFET POWER MOSFET - International Rectifier

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