DatasheetsPDF.com

SSM3K105TU

Toshiba Semiconductor
Part Number SSM3K105TU
Manufacturer Toshiba Semiconductor
Description Silicon N Channel MOS Type High Speed Switching Applications
Published Feb 14, 2008
Detailed Description www.DataSheet4U.com SSM3K105TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K105TU High Speed Switch...
Datasheet PDF File SSM3K105TU PDF File

SSM3K105TU
SSM3K105TU

Overview
www.
DataSheet4U.
com SSM3K105TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K105TU High Speed Switching Applications • • 4V drive Low on-resistance: Unit: mm Ron = 480mΩ (max) (@VGS = 3.
3V) Ron = 200mΩ (max) (@VGS = 4V) Ron = 110mΩ (max) (@VGS = 10V) 2.
0±0.
1 2.
1±0.
1 1.
7±0.
1 0.
65±0.
05 +0.
1 0.
3 -0.
05 3 0.
166±0.
05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 30 ± 20 2.
1 4.
2 800 500 150 −55~150 Unit V V 1 2 mW °C °C Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on ceramic board.
2 (25.
4 mm × 25.
4 mm × 0.
8 mm, Cu Pad: 645 mm ) Note 2: Mounted on FR4 board.
(25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 645 mm2 ) Note: UFM JEDEC JEITA TOSHIBA ― ― 2-2U1A Weight: 6.
6 mg (typ.
) Electrical Characteristics (Ta = 25°C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS IDSS IGSS Vth ⏐Yfs⏐ RDS (ON) Ciss Coss Crss ton toff VDSF Test Conditions ID = 1 mA, VGS = 0 VDS = 30 V, VGS = 0 VGS = ±16V, VDS = 0 VDS = 5 V, ID = 0.
1 mA VDS = 5 V, ID = 0.
75 A ID = 0.
75 A, VGS = 10 V Drain-Source on-resistance ID = 0.
75 A, VGS = 4 V ID = 0.
75 A, VGS = 3.
3 V Input capacitance Output capacitance Reverse transfer capacita...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)