DatasheetsPDF.com

IRF3205ZS

International Rectifier
Part Number IRF3205ZS
Manufacturer International Rectifier
Description Power MOSFET
Published Feb 19, 2008
Detailed Description PD - 95129A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Swit...
Datasheet PDF File IRF3205ZS PDF File

IRF3205ZS
IRF3205ZS


Overview
PD - 95129A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 6.
5mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
S ID = 75A TO-220AB D2Pak TO-262 IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max.
110 78 75 440 170 Units A W Linear Derating Factor VGS Gate-to-Source Voltage d EAS (Thermally limited) Single Pulse Avalanche Energy h EAS (Tested ) Single Pulse Avalanche Energy Tested Value Ù IAR Avalanche Current g EAR Repetitive Avalanche Energy 1.
1 ± 20 180 250 See Fig.
12a, 12b, 15, 16 W/°C V mJ A mJ TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds i Mounting Torque, 6-32 or M3 screw Thermal Resistance 300 (1.
6mm from case ) y y 10 lbf in (1.
1N m) RθJC RθCS RθJA RθJA Parameter Junction-to-Case i Case-to-Sink, Flat Greased Surface i Junction-to-Ambient j Junction-to-Ambient (PCB Mount) Typ.
––– 0.
50 ––– ––– Max.
0.
90 ––– 62 40 Units °C/W www.
irf.
com 1 07/23/10 IRF3205ZS/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) Drain-to-Source Br...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)