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BSTM45 Datasheet PDF


Part Number BSTM45
Manufacturer Siemens
Title BSTxxx
Description www.DataSheet4U.com ...
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Datasheet BSTM45 PDF File








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BST100 : P-channel vertical D-MOS transistor TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES • Very low RDS(on) • Direct interface to C-MOS • High-speed switching • No second breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance −ID = 200 mA; −VGS = 10 V Transfer admittance −ID = 200 mA; −VDS = 15 V PINNING - TO-92 VARIANT 1 2 3 = source = gate = drain  Yfs typ. RDS(on) −VDS ±VGSO −ID Ptot BST100 max. max. max. max. typ. max. 60 V 20 V 0.3 A 1 W 4,5 Ω 6 Ω 200 mS PIN CONFIGURATION handbook, halfpage d 1 2 3 g MAM144 .

BST120 : P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology. FEATURES • Very low RDS(on) • Direct interface to C-MOS • High-speed switching • No second breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance −ID = 200 mA; −VGS = 10 V Transfer admittance −ID = 200 mA; −VDS = 15 V PINNING - SOT89 1 = source 2 = drain 3 = gate  Yfs typ. RDS(on) −VDS ±VGSO −ID Ptot BST120 max. max. max. max. typ. max. 60 V 20 V 0,3 A 1 W 4,5 Ω 6 Ω 200 mS PIN CONFIGURATION handbook, halfpage d g 1 Bott.

BST122 : P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD-technology. FEATURES • Very low RDS(on) • Direct interface to C-MOS, TTL • High-speed switching • No second breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance −ID = 200 mA; −VGS = 10 V Transfer admittance −ID = 200 mA; −VDS = 15 V PINNING - SOT89 1 2 3 = source = drain = gate  Yfs typ. RDS(on) −VDS ±VGSO −ID Ptot BST122 max. max. max. max. max. typ. 60 V 20 V 0,25 A 1 W 10 Ω 7.5 Ω 125 mS PIN CONFIGURATION handbook, halfpage d g.

BST15 : PNP high-voltage transistor in a SOT89 plastic package. NPN complements: BST39 and BST40. MARKING TYPE NUMBER BST15 BST16 MARKING CODE BT1 BT2 1 Bottom view 2 3 handbook, halfpage BST15; BST16 PINNING PIN 1 2 3 emitter collector base DESCRIPTION 2 3 1 MAM297 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BST15 BST16 VCEO collector-emitter voltage BST15 BST16 VEBO emitter-base voltage BST15 BST16 IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations .

BST15 : www.DataSheet4U.com SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAIL – BST40 BT1 7 BST15 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC P tot T j:T stg VALUE -200 -200 -4 -1 -500 1 -65 to +150 UNIT V V V A mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Volta.

BST16 : SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAIL – BST39 BT2 7 BST16 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC P tot T j:T stg VALUE -350 -300 -4 -1 -500 1 -65 to +150 UNIT V V V A mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Break.

BST16 : PNP high-voltage transistor in a SOT89 plastic package. NPN complements: BST39 and BST40. MARKING TYPE NUMBER BST15 BST16 MARKING CODE BT1 BT2 1 Bottom view 2 3 handbook, halfpage BST15; BST16 PINNING PIN 1 2 3 emitter collector base DESCRIPTION 2 3 1 MAM297 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BST15 BST16 VCEO collector-emitter voltage BST15 BST16 VEBO emitter-base voltage BST15 BST16 IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations .

BST39 : NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16. MARKING TYPE NUMBER BST39 BST40 MARKING CODE AT1 AT2 1 Bottom view 2 3 handbook, halfpage BST39; BST40 PINNING PIN 1 2 3 emitter collector base DESCRIPTION 2 3 1 MAM296 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BST39 BST40 VCEO collector-emitter voltage BST39 BST40 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of .

BST39 : REPLACEMENT TYPE : BST39.BST40 FEATURES  Low Current  High Voltage HEBST39.40(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage BST39 BST40 VCBO 400 300 Collector-Emitter Voltage BST39 BST40 VCEO 350 250 Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction Temperature Storage Temperature VEBO IC PC RθJA TJ Tstg 5 100 500 250 150 -55~+150 Unit V V V mA mW °C/W °C °C SOT-89 1:BASE 2:COLLECTOR 3:EMITTER MARKING: BST39:AT1 BST40:AT2 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test condit.

BST39 : NPN High-Voltage Transistor FEATURES z Low current(max.100mA). z PC=1.3W. z High voltage(max.350v). Pb Lead-free APPLICATIONS z General purpose switching and amplification. Production specification BST39/BST40 ORDERING INFORMATION Type No. Marking BST39/BST40 AT1/AT2 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage BST39 BST40 BST39 BST40 400 300 350 250 VEBO Emitter-Base Voltage 5 IC Collector Current -DC 100 ICM Peak Collector Current 200 IBM Peak Base Current 100 Ptot Total powerDissipation 1.3 Tj,Tstg Junction and Storage Temperature -65 to +150 .

BST39 : SMD Type NPN High-Voltage Transistors BST39; BST40 Transistors Features Low current (max. 50 mA) High voltage (max. 300 V). Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage (open emitte) collector-emitter voltage (open-base ) BST39 BST40 BST39 BST40 VEBO IC ICM IBM 25 * Ptot Tstg Tj Tamb Rth j-a Rth j-s VCEO Symbol VCBO Rating 400 300 350 250 5 100 200 100 1.3 -65 to150 150 -65 to150 96 16 K/W K/W Unit V V V V V mA mA mA W emitter-base voltage (open collector) collector current (DC) peak collector current peak base current total power dissipation Tamb storage temperature junction temperature operating ambient temperature thermal resistance from junction to ambient * ther.

BST39 : BST39,BST40 TRANSISTOR (NPN) FEATURES z Low Current z High Voltage APPLICATIONS z General Purpose Switching and Amplification MARKING:BCT39:AT1 BCT40:AT2 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature BST39 BST40 BST39 BST40 Value 400 300 350 250 5 100 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown volt.

BST39 : Features  BVCEO 350V  IC = 0.5A High Continuous Current  ICM = 1A Peak Pulse Current  High HFE Hold Up  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ BST39 350V NPN HIGH-VOLTAGE TRANSISTOR IN SOT89 Mechanical Data  Package: SOT89  Package Material: Molded Plastic, “Green” Molding Compound UL Flammability Rating 94V-0  Moisture Sensitivity:.

BST40 : NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16. MARKING TYPE NUMBER BST39 BST40 MARKING CODE AT1 AT2 1 Bottom view 2 3 handbook, halfpage BST39; BST40 PINNING PIN 1 2 3 emitter collector base DESCRIPTION 2 3 1 MAM296 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BST39 BST40 VCEO collector-emitter voltage BST39 BST40 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of .

BST40 : REPLACEMENT TYPE : BST39.BST40 FEATURES  Low Current  High Voltage HEBST39.40(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage BST39 BST40 VCBO 400 300 Collector-Emitter Voltage BST39 BST40 VCEO 350 250 Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction Temperature Storage Temperature VEBO IC PC RθJA TJ Tstg 5 100 500 250 150 -55~+150 Unit V V V mA mW °C/W °C °C SOT-89 1:BASE 2:COLLECTOR 3:EMITTER MARKING: BST39:AT1 BST40:AT2 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test condit.

BST40 : NPN High-Voltage Transistor FEATURES z Low current(max.100mA). z PC=1.3W. z High voltage(max.350v). Pb Lead-free APPLICATIONS z General purpose switching and amplification. Production specification BST39/BST40 ORDERING INFORMATION Type No. Marking BST39/BST40 AT1/AT2 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage BST39 BST40 BST39 BST40 400 300 350 250 VEBO Emitter-Base Voltage 5 IC Collector Current -DC 100 ICM Peak Collector Current 200 IBM Peak Base Current 100 Ptot Total powerDissipation 1.3 Tj,Tstg Junction and Storage Temperature -65 to +150 .

BST40 : SMD Type NPN High-Voltage Transistors BST39; BST40 Transistors Features Low current (max. 50 mA) High voltage (max. 300 V). Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage (open emitte) collector-emitter voltage (open-base ) BST39 BST40 BST39 BST40 VEBO IC ICM IBM 25 * Ptot Tstg Tj Tamb Rth j-a Rth j-s VCEO Symbol VCBO Rating 400 300 350 250 5 100 200 100 1.3 -65 to150 150 -65 to150 96 16 K/W K/W Unit V V V V V mA mA mA W emitter-base voltage (open collector) collector current (DC) peak collector current peak base current total power dissipation Tamb storage temperature junction temperature operating ambient temperature thermal resistance from junction to ambient * ther.




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