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SPN1423A

SYNC POWER
Part Number SPN1423A
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Feb 22, 2008
Detailed Description SPN1423A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1423A is the N-Channel logic enhancement mode power field...
Datasheet PDF File SPN1423A PDF File

SPN1423A
SPN1423A

Overview
SPN1423A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1423A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  20V/4.
0A,RDS(ON)=80mΩ@VGS=4.
5V  20V/3.
4A,RDS(ON)=90mΩ@VGS=2.
5V  20V/2.
8A,RDS(ON)=110mΩ@VGS=1.
8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-353 ( SC – 70 ) package design PIN CONFIGURATION ( SOT-353 ; SC-70 ) PART MARKING 2020/04/10 Ver.
5 Page 1 SPN1423A N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 2 3 1,4,5 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN1423AS35RGB SOT-353 ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN1423AS35RGB : Tape Reel ; Pb – Free ; Halogen – Free Part Marking 2A ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Typical 20 ±12 2.
4 1.
7 6 1.
6 0.
95 0.
.
51 -55/150 -55/150 105 Unit V V A A A W ℃ ℃ ℃/W 2020/04/10 Ver.
5 Page 2 SPN1423A N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Para...


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