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IHW30N100R

Infineon Technologies
Part Number IHW30N100R
Manufacturer Infineon Technologies
Description Reverse Conducting IGBT
Published Feb 26, 2008
Detailed Description www.DataSheet4U.com Soft Switching Series IHW30N100R q C Reverse Conducting IGBT with monolithic body diode Features:...
Datasheet PDF File IHW30N100R PDF File

IHW30N100R
IHW30N100R

Overview
www.
DataSheet4U.
com Soft Switching Series IHW30N100R q C Reverse Conducting IGBT with monolithic body diode Features: • 1.
5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant Applications: • Microwave Oven • Soft Switching Applications Type IHW30N100R VCE 1000V IC 30A VCE(sat),Tj=25°C 1.
5V Tj,max 175°C Marking H30R100 Package PG-TO-247-3-21 G E PG-TO-247-3-21 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation, TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.
6mm (0.
063 in.
) from case for 10s Ptot Tj Tstg IFpul s VGE ICpul s IF 60 30 90 ±20 ±25 412 -40.
.
.
+175 -55.
.
.
+175 260 W °C °C V Symbol VCE IC 60 30 90 90 Value 1000 Unit V A 1 J-STD-020 and JESD-022 1 Rev.
2 July 06 Power Semiconductors www.
DataSheet4U.
com Soft Switching Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 15 V , I C = 30 A T j =2 5 ° C T j =1 5 0 ° C T j =1 7 5 ° C Diode forward voltage VF V...


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