DatasheetsPDF.com

10N20C

Fairchild Semiconductor
Part Number 10N20C
Manufacturer Fairchild Semiconductor
Description FQP10N20C
Published Mar 4, 2008
Detailed Description www.DataSheet4U.com FQP10N20C/FQPF10N20C QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-C...
Datasheet PDF File 10N20C PDF File

10N20C
10N20C

Overview
www.
DataSheet4U.
com FQP10N20C/FQPF10N20C QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
TM Features • • • • • • 9.
5A, 200V, RDS(on) = 0.
36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP10N20C 9.
5 6.
0 38 FQPF10N20C 200 9.
5 * 6.
0 * 38 * ± 30 210 9.
5 7.
2 5.
5 Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 2) (Note 1) (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 72 0.
57 -55 to +150 300 38 0.
3 * Drain current limited by maximum junction temperature.
Thermal Characteristics Symbol RθJC RθJS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient FQP10N20C 1.
74 0.
5 62.
5 FQPF10N20C 3.
33 -62.
5 Units °C/W °C/W °C/W ©2003 Fairchild Semiconductor Corporation Rev.
A, March 2003 www.
DataSheet4U.
com ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)