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2SK3857TK

Toshiba Semiconductor
Part Number 2SK3857TK
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 10, 2008
Detailed Description www.DataSheet4U.com 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM • Appl...
Datasheet PDF File 2SK3857TK PDF File

2SK3857TK
2SK3857TK


Overview
www.
DataSheet4U.
com 2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM • Application for Ultra-compact ECM 0.
22±0.
05 1.
2±0.
05 0.
8±0.
05 0.
32±0.
05 3 2 0.
1±0.
05 Unit: mm 0.
45 0.
45 1.
4±0.
05 0.
9±0.
1 Absolute Maximum Ratings (Ta=25°C) Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 −55~125 Unit V mA mW °C °C 1 0.
395±0.
03 TESM3 IDSS CLASSIFICATION A-Rank 140~240µA B-Rank 210~350µA 1.
Drain 2.
Source 3.
Gate JEDEC JEITA TOSHIBA 2-1R1A Weight: 2.
2mg (typ.
) Marking Equivalent Circuit D Type Name 9 IDSS Classification...



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