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C3331


Part Number C3331
Manufacturer Sanyo Semicon Device
Title 2SC3331
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C3330 : ST 2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group Collector Base Cutoff Current at VCB = 40 V Emitter Base Cutoff Current at VEB = 3 V Collector Base Breakd.

C3330 : ST 2SC3330 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 60 50 5 200 300 150 -55 to +150 Unit V V V mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limite.

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C333C104K1R5CA7301 : MULTILAYER CERAMIC CAPACITORS/AXIAL & RADIAL LEADED Multilayer ceramic capacitors are available in a variety of physical sizes and configurations, including leaded devices and surface mounted chips. Leaded styles include molded and conformally coated parts with axial and radial leads. However, the basic capacitor element is similar for all styles. It is called a chip and consists of formulated dielectric materials which have been cast into thin layers, interspersed with metal electrodes alternately exposed on opposite edges of the laminated structure. The entire structure is fired at high temperature to produce a monolithic block which provides high capacitance values in a small physical vol.




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