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ILP03N60

Infineon Technologies
Part Number ILP03N60
Manufacturer Infineon Technologies
Description LightMOS Power Transistor
Published Mar 10, 2008
Detailed Description www.DataSheet4U.com ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 LightMOS Power Transistor C • • • • • • • New high volt...
Datasheet PDF File ILP03N60 PDF File

ILP03N60
ILP03N60

Overview
www.
DataSheet4U.
com ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET Avalanche rated 150°C operating temperature FullPak isolates 2.
5 kV AC (1 min.
) P-TO-220-3-1 (TO-220AB) G E P-TO-220-3-31 (TO-220 FullPak) P-TO-263-3-2 (D2-PAK) (TO-263AB) P-TO-252-3-1 (D-PAK) (TO-252AA) Type ILA03N60 ILP03N60 ILB03N60 ILD03N60 Maximum Ratings Parameter VCE 600V 600V 600V 600V IC 3.
0A 3.
0A 3.
0A 3.
0A VCE(sat),Tj=25°C 2.
9V 2.
9V 2.
9V 2.
9V Tj,max 150°C 150°C 150°C 150°C Package P-TO-220-3-31 P-TO-220-3-1 P-TO-263-3-2 P-TO-252-3-1 Value ILA03N60 600 3 2.
2 9 5.
5 4 2.
2 9 5.
5 0.
32 ±30 1 16.
5 1 Ordering Code Q67040-S4626 Q67040-S4628 Q67040-S4627 Q67040-S4625 Symbol VCE TC = 25°C TC = 100°C IC ICpuls IF IFpuls EAS VGE dv/dt Ptot Tstg Ts Others 4.
5 3 Unit V A Collector-emitter voltage DC collector current Pulsed collector current, tp limited by Tjmax, tp < 10 ms Pulsed collector current, tp limited by Tjmax Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax, tp < 10 ms Diode pulsed current, tp limited by Tjmax Avalanche energy, single pulse IC=0.
4A, VCE=50V Gate-emitter voltage Reverse diode dv/dt IC ≤ 3A, VCE ≤ 450V, Tjmax ≤ 150°C Power dissipation (TC = 25°C) Operating junction and storage temperature Soldering temperature for 10 s (according to JEDEC J-STA-020A) 4 2.
5 mJ V V/ns 27 W °C -55.
.
.
+150 D-Pak Others 255 220 Reverse diode of transistor is commutated with same device according to figure C.
With application relevant values IC ≤ 1.
5A, CSnubber = 1 nF and RG ≥ 50Ω, dv/dt of the reverse diode is within its specification.
1 Power Semiconductors 1 Rev.
1.
2 Apr-04 www.
DataSheet4U.
com ^ ILA03N60, ILP03N60 ILB03N60, ILD03N60 Symbol RthJC RthJCD Conditions P-TO-220-3-31 Other packages TO-220-3-31 Other ...


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