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SSM1N45B

Part Number	SSM1N45B
Manufacturer	Fairchild Semiconductor
Description	450V N-Channel MOSFET
Published	Apr 1, 2008
Detailed Description	www.DataSheet4U.com SSM1N45B SSM1N45B 450V N-Channel MOSFET General Description These N-Channel enhancement mode power...
Datasheet	SSM1N45B PDF File

Overview

www.
DataSheet4U.
com SSM1N45B SSM1N45B 450V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for electronic ballasts based on half bridge configuration.
Features • • • • • • 0.
5A, 450V, RDS(on) = 4.
25Ω @VGS = 10 V Low gate charge ( typical 6.
5 nC) Low Crss ( typical 6.
5 pF) 100% avalanche tested Improved dv/dt capability Gate-Source Voltage ± 50V guaranteed D ! D ● ◀ S G ▲ ● ● G! SOT-223 SSM Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) SSM1N45B 450 0.
5 0.
32 4.
0 ± 50 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) Power Dissipation (TL = 25°C) 108 0.
5 0.
25 5.
5 0.
9 2.
5 0.
02 -55 to +150 300 TJ, Tstg TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient (Note 6b) Typ -- Max 63 Units °C/W ©2004 Fairchild Semiconductor Corporation Rev.
A, May 2004 www.
DataSheet4U.
com SSM1N45B Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Bo...

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SSM1N45B 450V N-Channel MOSFET - Fairchild Semiconductor

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