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D04S60

Infineon Technologies
Part Number D04S60
Manufacturer Infineon Technologies
Description SiC Schottky Diode
Published Apr 3, 2008
Detailed Description www.DataSheet4U.com Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semico...
Datasheet PDF File D04S60 PDF File

D04S60
D04S60

Overview
www.
DataSheet4U.
com Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 800W 1) • No forward recovery P-TO220-2-2.
SDP04S60, SDD04S60 SDT04S60 Product Summary VRRM Qc IF P-TO252-3-1.
600 13 4 P-TO220-3-1.
V nC A Type SDP04S60 SDD04S60 SDT04S60 Package P-TO220-3-1.
P-TO252-3-1.
P-TO220-2-2.
Ordering Code Q67040-S4369 Q67040-S4368 Q67040-S4445 Marking D04S60 D04S60 D04S60 Pin 1 n.
c.
PIN 2 C PIN 3 A n.
c.
A C C Value 4 5.
6 12.
5 18 40 0.
78 600 600 36.
5 A Unit A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms IF IFRMS Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.
1 IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature A²s V W °C -55.
.
.
+175 Page 1 2004-02-11 www.
DataSheet4U.
com Final data SDP04S60, SDD04S60 SDT04S60 Values min.
typ.
35 max.
4.
1 62 62 75 50 K/W Unit Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: P-TO263-3-2: @ min.
footprint P-TO263-3-2: @ 6 cm2 cooling area 2) P-TO252-3-1: @ min.
footprint P-TO252-3-1: @ 6 cm2 cooling area 2) Symbol RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=4A, Tj=25°C IF=4A, Tj=150°C Symbol min.
VF IR - Values typ.
max.
Unit V 1.
7 2 15 40 1.
9 2.
4 µA 200 1000 Reverse current V R=600V, T j=25°...


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