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OP770B

OPTEK Technologies
Part Number OP770B
Manufacturer OPTEK Technologies
Description NPN Photo transistor
Published Apr 4, 2008
Detailed Description www.DataSheet4U.com Prod uct Bul le tin OP770A Feb ru ary 2000 NPN Phototransistor with Collector-Emitter Capacitor Ty...
Datasheet PDF File OP770B PDF File

OP770B
OP770B

Overview
www.
DataSheet4U.
com Prod uct Bul le tin OP770A Feb ru ary 2000 NPN Phototransistor with Collector-Emitter Capacitor Types OP770A, OP770B, OP770C, OP770D Features • • • • Supresses high frequency noise Variety of sensitivity ranges Wide receiving angle Side looking package for space limited applications Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Collector- Emitter Volt age.
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30 V Emitter- Collector Volt age .
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5.
0 V Stor age and Op er at ing Tem pera ture Range .
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-40 ° C to +100° C Lead Soldering Tem pera ture [1/16 inch (1.
6 mm) from case for 5 sec .
with sol der ing iron] .
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260 ° C(1) Power Dis si pa tion .
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100 mW(2) Notes: (1) RMA flux is rec om mended.
Du ra tion can be ex tended to 10 sec .
max.
when flow sol der ing.
Max.
20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.
33 mW/° C above 25° C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lense surface of the phototransistor being tested.
(4) To calculate typical collector dark current in µA, use the formula ICED = 10 (0.
040T A-3.
4) when TA is ambient temperature in °C.
Description The OP770 consists of an NPN phototransistor and 1000 pF capacitor molded in a clear epoxy package.
The internal collector-emitter capacitor allows the device to be used in applications where external high frequency emissions could compromise signal integrity.
The device’s wide receiving angle provides relatively even reception over a large area.
The OP770 is 100% productio...


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