DatasheetsPDF.com

BSP321P

Infineon Technologies
Part Number BSP321P
Manufacturer Infineon Technologies
Description SIPMOS Small Signal Transistor
Published Apr 4, 2008
Detailed Description www.DataSheet4U.com BSP321P SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Normal level • A...
Datasheet PDF File BSP321P PDF File

BSP321P
BSP321P

Overview
www.
DataSheet4U.
com BSP321P SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID -100 900 -0.
98 V mΩ A PG-SOT-223 Type BSP321P Package PG-SOT-223 Tape and Reel Information L6327: 1000 pcs/reel Marking BSP321P Lead free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD Class Soldering temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg JESD22-C101-HBM T C=25 °C T C=25 °C I D=-0.
98 A, R GS=25 Ω Value -0.
98 -0.
79 -3.
9 57 ±20 1.
8 -55 .
.
.
150 1A (250V to 500V) 260 °C 55/150/56 mJ V W °C Unit A Rev 1.
02 page 1 2007-03-27 www.
DataSheet4U.
com BSP321P Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint, steady state 6 cm2 cooling area1), steady state Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS,I D=-380 µA V DS=-100 V, V GS=0 V, T j=25 °C V DS=-100 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20 V, V DS=0 V V GS=-10 V, I D=-0.
98 A |V DS|>2|I D|R DS(on)max, I D=-0.
79 A -100 -2.
1 -3.
0 -4 V 115 Values typ.
max.
Unit - - 70 Zero gate voltage drain current I DSS - -0.
1 -1 µA - -10 -10 689 -100 -100 900 nA mΩ Transconductance g fs 0.
6 1.
2 - S 1) 2 Device on 40 mm x 40 mm x 1.
5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Rev 1.
02 page 2 2007-03-27 www.
DataSheet4U.
com BSP321P Parameter Symbol Conditions min.
Dy...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)