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V50100P

Part Number	V50100P
Manufacturer	Vishay Siliconix
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published	Apr 4, 2008
Detailed Description	www.DataSheet4U.com V50100P New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rec...
Datasheet	V50100P PDF File

Overview

www.
DataSheet4U.
com V50100P New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
372 V at IF = 5 A TO-247AD (TO-3P) Major Ratings and Characteristics IF(AV) VRRM IFSM VF at IF = 20 A TJ max.
2 x 25 A 100 V 250 A 0.
64 V 150 °C PIN 1 PIN 3 PIN 2 CASE 3 2 1 Features • • • • • Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Mechanical Data Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As mar...

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V50100P Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay Siliconix

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