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MT45W4MW16B

Micron Semiconductor
Part Number MT45W4MW16B
Manufacturer Micron Semiconductor
Description (MT45W2MW16B / MT45W4MW16B) Burst Cellularram Memory
Published Apr 7, 2008
Detailed Description www.DataSheet4U.com ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM Features ...
Datasheet PDF File MT45W4MW16B PDF File

MT45W4MW16B
MT45W4MW16B

Overview
www.
DataSheet4U.
com ADVANCE‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.
70V–1.
95V VCC 1.
70V–2.
25V VCCQ (Option W) • Random Access Time: 70ns • Burst Mode Write Access Continuous burst • Burst Mode Read Access 4, 8, or 16 words, or continuous burst MAX clock rate: 104 MHz (tCLK = 9.
62ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz t ACLK: 6.
5ns @ 104 MHz • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns • Low Power Consumption Asynchronous READ < 25mA Intrapage READ < 15mA Initial access, burst READ: (39ns [4 clocks] @ 104 MHz) < 35mA Continuous burst READ < 15mA Standby: 90µA (32Mb), 100µA (64Mb) Deep power-down < 10µA • Low-Power Features Temperature Compensated Refresh (TCR) Partial Array Refresh (PAR) Deep Power-Down (DPD) Mode Options • VCC Core Voltage Supply: 1.
80V – MT45WxMx16BFB • VCCQ ...


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