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IPB050N06NG

Infineon Technologies
Part Number IPB050N06NG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Apr 9, 2008
Detailed Description OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - nor...
Datasheet PDF File IPB050N06NG PDF File

IPB050N06NG
IPB050N06NG

Overview
OptiMOS® Power-Transistor Features • For fast switching converters and sync.
rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant IPP050N06N G IPB050N06N G Product Summary V DS R DS(on),max SMDversion ID 60 V 4.
7 m: 100 A Type IPP050N06N IPB050N06N Package Marking PG-TO220-3 050N06N PG-TO263-3 050N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T C=25 °C1) T C=100 °C T C=25 °C2) Avalanche energy, single pulse E AS I D=100 A, R GS=25 : Reverse diode dv /dt dv /dt I D=100 A, V DS=48 V, d...


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