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IPB08CNE8NG

Infineon Technologies
Part Number IPB08CNE8NG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Apr 9, 2008
Detailed Description com IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal lev...
Datasheet PDF File IPB08CNE8NG PDF File

IPB08CNE8NG
IPB08CNE8NG

Overview
com IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 85 8.
2 95 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G Package Marking PG-TO263-3 08CNE8N PG-TO262-3 08CNE8N PG-TO220-3 08CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T...


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