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IPP080N06NG

Infineon Technologies
Part Number IPP080N06NG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Apr 9, 2008
Detailed Description www.DataSheet4U.com IPB080N06N G IPP080N06N G OptiMOS® Power-Transistor Features • Low gate charge for fast switching...
Datasheet PDF File IPP080N06NG PDF File

IPP080N06NG
IPP080N06NG

Overview
www.
DataSheet4U.
com IPB080N06N G IPP080N06N G OptiMOS® Power-Transistor Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 7.
7 80 V mΩ A Type IPB080N06N G IPP080N06N G Package Marking P-TO263-3-2 080N06N P-TO220-3-1 080N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage tempera...


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