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IPB160N04S2L-03

Infineon Technologies
Part Number IPB160N04S2L-03
Manufacturer Infineon Technologies
Description Power-Transistor
Published Apr 9, 2008
Detailed Description www.DataSheet4U.com IPB160N04S2L-03 OptiMOS® - T Power-Transistor Features • N-channel Logic Level - Enhancement mode ...
Datasheet PDF File IPB160N04S2L-03 PDF File

IPB160N04S2L-03
IPB160N04S2L-03

Overview
www.
DataSheet4U.
com IPB160N04S2L-03 OptiMOS® - T Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max ID 40 2.
7 160 V mΩ A PG-TO263-7-3 Type IPB160N04S2L-03 Package PG-TO263-7-3 Ordering Code SP0002-18153 Marking P2N04L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C2) Pulsed drain current2) Avalanche energy, single pulse I D,pulse E AS V GS Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 P tot T j, T stg T C=25 °C T C=25 °C I D=80 A, R GS=25 Ω Value 160 160 640 810 ±20 300 -55 .
.
.
175 55/175/56 mJ V W °C Unit A Rev.
1.
0 page 1 2006-03-02 www.
DataSheet4U.
com IPB160N04S2L-03 Parameter Symbol Conditions min.
Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=250 µA V DS=40 V, V GS=0 V, T j=25 °C V DS=40 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.
5 V, I D=80 A, SMD version V GS=10 V, I D=80 A, SMD version 40 1.
2 1.
6 2 V 0.
5 62 40 K/W Values typ.
max.
Unit Zero gate voltage drain current I DSS - 0.
1 1 µA - 10 1 2.
8 100 100 3.
7 nA mΩ Drain-source on-state resistance R DS(on) - 2.
0 2.
7 Rev.
1.
0 page 2 2006-03-02 www.
DataSheet4U.
com IPB160N04S2L-03 Parameter Symbol Conditions min.
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate ...


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